OPOMNIK: IJS KOLOKVIJ, torek, 09. 04. 2013; ob 13. uri; prof. dr. Luigi Colombo

[Barbara Hrovatin]

Vabimo vas na 16. predavanje iz sklopa "Kolokviji na IJS" v letu 2012/13, ki
bo v torek, 9. aprila 2013, ob 13. uri v Veliki predavalnici Instituta
>Jožef Stefan<  na Jamovi cesti 39 v Ljubljani. Napovednik predavanja
najdete tudi na naslovu http://www.ijs.si/ijsw/Koledar_prireditev, posnetke
preteklih predavanj pa na http://videolectures.net/kolokviji_ijs.

~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~

prof. dr. Luigi Colombo

Texas Instruments Incorporated, Dallas, ZDA

 

Grafen in integracija grafenskih naprav kot izziv s stališča materialov

 

V preteklem desetletju se je značilna velikost gradnikov vrhunske
elektronike na osnovi silicija zmanjšala s 100 nm ali več na 30 nm in manj.
Da bi rešili težave z močjo, s katerimi se elektronska industrija srečuje ob
nadaljnji miniaturizaciji CMOS naprav, je bil ustanovljen program z imenom
Nanoelectronic Research Initiative. Namen tega programa je razviti nove
materiale in naprave, ki bodo izkoriščali nove spremenljivke stanja ter tako
izboljšali delovanje pri dani gostoti moči. Grafen, satasta enoslojna mreža
atomov ogljika, je zaradi enkratnih transportnih lastnosti in izjemnih
kemijskih in fizikalnih lastnosti v zadnjem času predmet mnogih teoretičnih
in eksperimentalnih raziskav. Na osnovi grafena bi lahko izdelali nove
naprave, ki izkoriščajo teoretično napovedani obstoj Bose-Einsteinovega
kondenzata v dvoslojnih grafenskih filmih, tunelski in lateralni tunelski
transistor na poljski efekt ter naprave na osnovi Veselagove leče. Da bi
pokazali, da ti predlogi izpolnjujejo osnovne tehnične zahteve, potrebujemo
visokokakovostne filme, ki jih je mogoče povezati z dielektriki in opremiti
s kovinskimi stiki. Pregledali bomo potrebe po napravah onstran CMOS, rast
velikih grafena z veliko površino, integracijo dielektrikov in kovinskih
stikov z grafenom ter njihove učinke na karakteristike tranzistorjev na
poljski efekt.

Predavanje bo v angleščini.

Lepo vabljeni!

 

*****

 

 

We invite you to the 16th Institute colloquium in the academic year 2012/13.
The colloquium will be held on Tuesday April 9, 2013 at 1 PM in the main
Institute lecture hall, Jamova 39, Ljubljana. To read the abstract click
http://www.ijs.si/ijsw/Koledar_prireditev. Past colloquia are posted on
http://videolectures.net/kolokviji_ijs.

 

********************************************

prof. dr. Luigi Colombo

Texas Instruments Incorporated, Dallas, USA

 

Graphene and Graphene Device Integration: A Materials Perspective

 

In the past decade, the state-of-the-art silicon-based electronics has gone
from devices at or above 100 nm to the realm of 30 nm and below. In order to
address the power issues the industry is facing as CMOS devices are scaled
further, a program called Nanoelectronic Research Initiative was created to
develop new materials and devices that take advantage of new state variables
with the objective of improving performance per power density. Graphene, a
monolayer of carbon atoms arranged in a honeycomb lattice, has recently been
subject of considerable theoretical and experimental interest because of its
unique transport properties together with exceptional chemical and physical
properties. New devices taking advantage of the theoretical prediction on
the existence of a Bose-Einstein condensate in bi-layer graphene films,
graphene based tunnel FETs, lateral tunnel FETs, and Veselago lens based
devices have been proposed. However, in order to demonstrate that any of the
proposed can meet the most basic device requirements, high quality films
will have to be developed and integrated with dielectrics and metal
contacts. We will review the need for devices beyond CMOS, growth of large
area graphene and integration of dielectrics and metal contacts with
graphene and their effects on field effect transistors characteristics

-------------- next part --------------
An HTML attachment was scrubbed...
URL: <http://mailman.ijs.si/pipermail/kolokvij-ijs/attachments/20130408/f06b4968/attachment.html>