<html xmlns:v="urn:schemas-microsoft-com:vml" xmlns:o="urn:schemas-microsoft-com:office:office" xmlns:w="urn:schemas-microsoft-com:office:word" xmlns:m="http://schemas.microsoft.com/office/2004/12/omml" xmlns="http://www.w3.org/TR/REC-html40"><head><meta http-equiv=Content-Type content="text/html; charset=iso-8859-2"><meta name=Generator content="Microsoft Word 14 (filtered medium)"><style><!--
/* Font Definitions */
@font-face
{font-family:SimSun;
panose-1:2 1 6 0 3 1 1 1 1 1;}
@font-face
{font-family:SimSun;
panose-1:2 1 6 0 3 1 1 1 1 1;}
@font-face
{font-family:Calibri;
panose-1:2 15 5 2 2 2 4 3 2 4;}
@font-face
{font-family:Tahoma;
panose-1:2 11 6 4 3 5 4 4 2 4;}
@font-face
{font-family:"\@SimSun";
panose-1:2 1 6 0 3 1 1 1 1 1;}
/* Style Definitions */
p.MsoNormal, li.MsoNormal, div.MsoNormal
{margin:0cm;
margin-bottom:.0001pt;
font-size:12.0pt;
font-family:"Times New Roman","serif";}
a:link, span.MsoHyperlink
{mso-style-priority:99;
color:blue;
text-decoration:underline;}
a:visited, span.MsoHyperlinkFollowed
{mso-style-priority:99;
color:purple;
text-decoration:underline;}
p.MsoAcetate, li.MsoAcetate, div.MsoAcetate
{mso-style-priority:99;
mso-style-link:"Balloon Text Char";
margin:0cm;
margin-bottom:.0001pt;
font-size:8.0pt;
font-family:"Tahoma","sans-serif";}
span.BalloonTextChar
{mso-style-name:"Balloon Text Char";
mso-style-priority:99;
mso-style-link:"Balloon Text";
font-family:"Tahoma","sans-serif";}
span.EmailStyle19
{mso-style-type:personal;
font-family:"Calibri","sans-serif";
color:windowtext;}
span.EmailStyle20
{mso-style-type:personal;
font-family:"Calibri","sans-serif";
color:#1F497D;}
span.EmailStyle21
{mso-style-type:personal;
font-family:"Calibri","sans-serif";
color:#1F497D;}
span.EmailStyle22
{mso-style-type:personal;
font-family:"Calibri","sans-serif";
color:#1F497D;}
span.EmailStyle23
{mso-style-type:personal;
font-family:"Calibri","sans-serif";
color:#1F497D;}
span.EmailStyle24
{mso-style-type:personal;
font-family:"Calibri","sans-serif";
color:#1F497D;}
span.EmailStyle25
{mso-style-type:personal;
font-family:"Calibri","sans-serif";
color:#1F497D;}
span.EmailStyle26
{mso-style-type:personal;
font-family:"Calibri","sans-serif";
color:#1F497D;}
span.EmailStyle27
{mso-style-type:personal;
font-family:"Calibri","sans-serif";
color:#1F497D;}
span.EmailStyle28
{mso-style-type:personal;
font-family:"Calibri","sans-serif";
color:#1F497D;}
span.EmailStyle29
{mso-style-type:personal;
font-family:"Calibri","sans-serif";
color:#1F497D;}
span.EmailStyle30
{mso-style-type:personal;
font-family:"Calibri","sans-serif";
color:#1F497D;}
span.EmailStyle31
{mso-style-type:personal;
font-family:"Calibri","sans-serif";
color:#1F497D;}
span.EmailStyle32
{mso-style-type:personal;
font-family:"Calibri","sans-serif";
color:#1F497D;}
span.EmailStyle33
{mso-style-type:personal;
font-family:"Calibri","sans-serif";
color:#1F497D;}
span.EmailStyle34
{mso-style-type:personal;
font-family:"Calibri","sans-serif";
color:#1F497D;}
span.EmailStyle35
{mso-style-type:personal;
font-family:"Calibri","sans-serif";
color:#1F497D;}
span.EmailStyle36
{mso-style-type:personal;
font-family:"Calibri","sans-serif";
color:#1F497D;}
span.EmailStyle37
{mso-style-type:personal;
font-family:"Calibri","sans-serif";
color:#1F497D;}
span.EmailStyle38
{mso-style-type:personal;
font-family:"Calibri","sans-serif";
color:#1F497D;}
span.EmailStyle39
{mso-style-type:personal;
font-family:"Calibri","sans-serif";
color:#1F497D;}
span.EmailStyle40
{mso-style-type:personal;
font-family:"Calibri","sans-serif";
color:#1F497D;}
span.EmailStyle41
{mso-style-type:personal;
font-family:"Calibri","sans-serif";
color:#1F497D;}
span.EmailStyle42
{mso-style-type:personal;
font-family:"Calibri","sans-serif";
color:#1F497D;}
span.EmailStyle43
{mso-style-type:personal;
font-family:"Calibri","sans-serif";
color:#1F497D;}
span.EmailStyle44
{mso-style-type:personal;
font-family:"Calibri","sans-serif";
color:#1F497D;}
span.EmailStyle45
{mso-style-type:personal;
font-family:"Calibri","sans-serif";
color:#1F497D;}
span.EmailStyle46
{mso-style-type:personal;
font-family:"Calibri","sans-serif";
color:#1F497D;}
span.EmailStyle47
{mso-style-type:personal;
font-family:"Calibri","sans-serif";
color:#1F497D;}
span.EmailStyle48
{mso-style-type:personal;
font-family:"Calibri","sans-serif";
color:#1F497D;}
span.EmailStyle49
{mso-style-type:personal;
font-family:"Calibri","sans-serif";
color:#1F497D;}
span.EmailStyle50
{mso-style-type:personal;
font-family:"Calibri","sans-serif";
color:#1F497D;}
span.EmailStyle51
{mso-style-type:personal;
font-family:"Calibri","sans-serif";
color:#1F497D;}
span.EmailStyle52
{mso-style-type:personal;
font-family:"Calibri","sans-serif";
color:#1F497D;}
span.EmailStyle53
{mso-style-type:personal;
font-family:"Calibri","sans-serif";
color:#1F497D;}
span.EmailStyle54
{mso-style-type:personal;
font-family:"Calibri","sans-serif";
color:#1F497D;}
span.EmailStyle55
{mso-style-type:personal;
font-family:"Calibri","sans-serif";
color:#1F497D;}
span.EmailStyle57
{mso-style-type:personal-reply;
font-family:"Calibri","sans-serif";
color:#1F497D;}
.MsoChpDefault
{mso-style-type:export-only;
font-size:10.0pt;}
@page WordSection1
{size:612.0pt 792.0pt;
margin:70.85pt 70.85pt 70.85pt 70.85pt;}
div.WordSection1
{page:WordSection1;}
--></style><!--[if gte mso 9]><xml>
<o:shapedefaults v:ext="edit" spidmax="1026" />
</xml><![endif]--><!--[if gte mso 9]><xml>
<o:shapelayout v:ext="edit">
<o:idmap v:ext="edit" data="1" />
</o:shapelayout></xml><![endif]--></head><body lang=SL link=blue vlink=purple><div class=WordSection1><p class=MsoNormal align=center style='text-align:center'>Vabimo vas na 16. predavanje iz sklopa "Kolokviji na IJS" v letu 2012/13, ki bo <strong><span style='color:red'>v torek, 9. aprila 2013, ob 13. uri </span></strong><span style='color:red'>v Veliki predavalnici Instituta »Jožef Stefan«</span> na Jamovi cesti 39 v Ljubljani. Napovednik predavanja najdete tudi na naslovu <a href="http://www.ijs.si/ijsw/Koledar_prireditev">http://www.ijs.si/ijsw/Koledar_prireditev</a>, posnetke preteklih predavanj<span style='color:blue'> </span>pa na <a href="http://videolectures.net/kolokviji_ijs">http://videolectures.net/kolokviji_ijs</a>.<o:p></o:p></p><p class=MsoNormal align=center style='margin-bottom:12.0pt;text-align:center'>~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~<o:p></o:p></p><p class=MsoNormal align=center style='text-align:center'><b>prof. dr. Luigi Colombo<o:p></o:p></b></p><p class=MsoNormal align=center style='text-align:center'><i>Texas Instruments Incorporated, Dallas, ZDA<o:p></o:p></i></p><p class=MsoNormal align=center style='mso-margin-top-alt:auto;text-align:center'><b><span style='font-size:14.0pt;mso-fareast-language:SL'><o:p> </o:p></span></b></p><p class=MsoNormal align=center style='text-align:center'><b><span style='font-size:14.0pt'>Grafen in integracija grafenskih naprav kot izziv s stališča materialov<o:p></o:p></span></b></p><p class=MsoNormal align=center style='text-align:center'><span style='font-size:11.0pt;font-family:"Arial","sans-serif"'><o:p> </o:p></span></p><p class=MsoNormal align=center style='text-align:center'>V preteklem desetletju se je značilna velikost gradnikov vrhunske elektronike na osnovi silicija zmanjšala s 100 nm ali več na 30 nm in manj. Da bi rešili težave z močjo, s katerimi se elektronska industrija srečuje ob nadaljnji miniaturizaciji CMOS naprav, je bil ustanovljen program z imenom Nanoelectronic Research Initiative. Namen tega programa je razviti nove materiale in naprave, ki bodo izkoriščali nove spremenljivke stanja ter tako izboljšali delovanje pri dani gostoti moči. Grafen, satasta enoslojna mreža atomov ogljika, je zaradi enkratnih transportnih lastnosti in izjemnih kemijskih in fizikalnih lastnosti v zadnjem času predmet mnogih teoretičnih in eksperimentalnih raziskav. Na osnovi grafena bi lahko izdelali nove naprave, ki izkoriščajo teoretično napovedani obstoj Bose-Einsteinovega kondenzata v dvoslojnih grafenskih filmih, tunelski in lateralni tunelski transistor na poljski efekt ter naprave na osnovi Veselagove leče. Da bi pokazali, da ti predlogi izpolnjujejo osnovne tehnične zahteve, potrebujemo visokokakovostne filme, ki jih je mogoče povezati z dielektriki in opremiti s kovinskimi stiki. Pregledali bomo potrebe po napravah onstran CMOS, rast velikih grafena z veliko površino, integracijo dielektrikov in kovinskih stikov z grafenom ter njihove učinke na karakteristike tranzistorjev na poljski efekt.<i><o:p></o:p></i></p><p class=MsoNormal align=center style='mso-margin-top-alt:auto;margin-bottom:12.0pt;text-align:center'>Predavanje bo v angleščini.<span style='mso-fareast-language:SL'><o:p></o:p></span></p><p class=MsoNormal align=center style='mso-margin-top-alt:auto;margin-bottom:12.0pt;text-align:center'><strong><span style='font-family:"Calibri","sans-serif";color:red'>Lepo vabljeni!</span></strong><strong><span style='font-weight:normal'><o:p></o:p></span></strong></p><p class=MsoNormal align=center style='text-align:center'><b><span lang=EN-US style='font-size:14.0pt;font-family:"Calibri","sans-serif";color:#1F497D'><o:p> </o:p></span></b></p><p class=MsoNormal align=center style='text-align:center'><b><span lang=EN-US style='font-size:14.0pt;font-family:"Calibri","sans-serif";color:black'>*****</span></b><span style='font-size:14.0pt;font-family:"Calibri","sans-serif"'><o:p></o:p></span></p><p class=MsoNormal align=center style='text-align:center'><span lang=EN-US style='font-size:11.0pt;font-family:"Calibri","sans-serif";color:#1F497D'><o:p> </o:p></span></p><p class=MsoNormal align=center style='text-align:center'><span lang=EN-US style='font-size:11.0pt;font-family:"Calibri","sans-serif";color:#1F497D'><o:p> </o:p></span></p><p class=MsoNormal align=center style='text-align:center'><span style='color:black'>We invite you to the 16th Institute colloquium in the academic year 2012/13. The colloquium will be held <b>on Tuesday April 9, 2013 at 1 PM</b> in <b>the main Institute</b></span><b><span style='color:#1F497D'> </span><span style='color:black'>lecture hall</span></b><span style='color:black'>, Jamova 39, Ljubljana. To read the abstract click </span><span style='color:#1F497D'><a href="http://www.ijs.si/ijsw/Koledar_prireditev">http://www.ijs.si/ijsw/Koledar_prireditev</a>. </span><span style='color:black'>Past colloquia are posted on</span><span style='color:#1F497D'> <a href="http://videolectures.net/kolokviji_ijs">http://videolectures.net/kolokviji_ijs</a>.<o:p></o:p></span></p><p class=MsoNormal align=center style='text-align:center'><span style='color:#1F497D'><o:p> </o:p></span></p><p class=MsoNormal align=center style='margin-bottom:12.0pt;text-align:center'>********************************************<b><o:p></o:p></b></p><p class=MsoNormal align=center style='text-align:center'><b>prof. dr. Luigi Colombo<o:p></o:p></b></p><p class=MsoNormal align=center style='text-align:center'><i>Texas Instruments Incorporated, Dallas, USA<o:p></o:p></i></p><p class=MsoNormal align=center style='text-align:center'><b><span style='font-size:16.0pt'><o:p> </o:p></span></b></p><p class=MsoNormal align=center style='text-align:center'><b><span style='font-size:16.0pt'>Graphene and Graphene Device Integration: A Materials Perspective</span></b><b><span style='font-size:16.0pt;mso-fareast-language:SL'><o:p></o:p></span></b></p><p class=MsoNormal align=center style='text-align:center'><o:p> </o:p></p><p class=MsoNormal align=center style='text-align:center'>In the past decade, the state-of-the-art silicon-based electronics has gone from devices at or above 100 nm to the realm of 30 nm and below. In order to address the power issues the industry is facing as CMOS devices are scaled further, a program called Nanoelectronic Research Initiative was created to develop new materials and devices that take advantage of new state variables with the objective of improving performance per power density. Graphene, a monolayer of carbon atoms arranged in a honeycomb lattice, has recently been subject of considerable theoretical and experimental interest because of its unique transport properties together with exceptional chemical and physical properties. New devices taking advantage of the theoretical prediction on the existence of a Bose-Einstein condensate in bi-layer graphene films, graphene based tunnel FETs, lateral tunnel FETs, and Veselago lens based devices have been proposed. However, in order to demonstrate that any of the proposed can meet the most basic device requirements, high quality films will have to be developed and integrated with dielectrics and metal contacts. We will review the need for devices beyond CMOS, growth of large area graphene and integration of dielectrics and metal contacts with graphene and their effects on field effect transistors characteristics<span style='font-size:11.0pt;font-family:"Calibri","sans-serif";color:#1F497D'><o:p></o:p></span></p></div></body></html>