IJS KOLOKVIJ, 22. avgust 2008, prof. Susan Trolier-McKinstry

[Andreja Berglez]

Vabim vas na 23. predavanje iz sklopa "Kolokviji na IJS" v letu 2007/08, ki
bo v petek, 22. avgusta 2008, ob 13:00 uri v Veliki predavalnici Instituta
>Jožef Stefan< na Jamovi cesti 39 v Ljubljani. Napovednik predavanja najdete
tudi na naslovu http://www.ijs.si/ijsw/Koledar_prireditev, posnetke
preteklih predavanj pa na http://videolectures.net/kolokviji_ijs. 

~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~
prof. Susan Trolier-McKinstry 

Materials Science and Engineering Department and Materials Research
Institute, Pennsylvania State University, ZDA

Piezoelektrični MEMS-i za senzorje, aktuatorje in zbiralce energije 

Piezoelektrični mikro elektro-mehanski sistemi (MEMS) so osnova za
visokoobčutljive senzorje, neodvisne nizkonapetostne aktuatorje in v zadnjem
času še posebej zanimive zbiralce energije. Aktivni del je piezoelektrična
tanka plast Pb(Zr,Ti)O3   (PZT) na silicijevi rezini. Avtorica bo
predstavila probleme in rešitve pri pripravi MEMS, ki vključujejo  pripravo
plasti in še posebej kako doseči ustrezno orientacijo PZT, jedkanja plasti
in pomisleke o dolgotrajni stabilnosti struktur. Osrednji del bo namenjen
izzivom,  ki se jih pravkar lotevajo, to je zagotovitvi boljše kemijske
homogenosti plasti,  znižanju temperature priprave plasti  kar bi omogočalo
uporabo polimernih nosilcev, študiju metod nanašanja plasti, da bi se
izognili litografiji, ter raziskavam zanesljivosti v povezavi z defektno
strukturo plasti. Ob koncu bo predstavila dva primera MEMS: rf stikalo in
visoko-frekvenčni ultrazvočni sistem.

Predavanje bo v angleščini.

Lepo vabljeni!

***

 

We would like to invite you to 23rd lecture of the "Kolokvij na IJS" in the
school year 2007/08. The lecture will be held on Friday, Avgust 22, 2008, at
1 pm at JSI main lecture hall, Jamova 39, Ljubljana. The abstract of the
lecture can be found on website:
<http://www.ijs.si/ijsw/Koledar_prireditev>
http://www.ijs.si/ijsw/Koledar_prireditev, the previous recorded lectures
can be found on website:  <http://videolectures.net/kolokviji_ijs>
http://videolectures.net/kolokviji_ijs. 

********************************************



prof. Susan Trolier-McKinstry 

Materials Science and Engineering Department and Materials Research
Institute, Pennsylvania State University, ZDA

Piezoelectric Thin Films for Sensors, Actuators, and Energy Harvesting 

 

Piezoelectric MEMS offer the opportunity for high sensitivity sensors and
high authority, low voltage actuators.  If the devices are mounted in
mechanically noisy environments, they can also be used for energy
harvesting.  Key to all of these applications is the ability to obtain (and
retain!) high piezoelectric coefficients.  In particular, for these
non-resonant applications, the e31,f coefficient should be maximized to
increase device functionality.  This paper will describe the impact of
composition, orientation, and microstructure on the piezoelectric properties
of perovskite thin films such as PbZr1-xTixO3 (PZT).  Superior piezoelectric
properties (e31,f of -11 to -12 C/m2) are achieved in {001} oriented
PbZr0.52Ti0.48O3 films on Si substrates.  Good orientation results can be
obtained when a PbO-rich PbTiO3 templating layer is used, independent of the
underlying structural layers in a MEMS device.  The piezoelectric properties
can be heavily degraded during patterning, particularly if dry etching
procedures are employed.  While some of this damage can be ameliorated by
post-patterning annealing, there is not yet any data on how this impacts the
long-term reliability of the piezoelectric layer.  Some of the ongoing
research needs in the field, including elimination of Zr/Ti gradients
through the film depth, decreasing the processing temperatures to enable
compatibility with polymeric substrates, lithography-free patterning of
complex oxides, robust deposition and patterning procedures for high aspect
ratio structures, and understanding the role of defect chemistry on device
reliability will be discussed, along with potential solutions to these
challenges.  Finally, a few examples of MEMS devices, including an rf switch
and a high frequency ultrasound system will be reviewed.

 

We look forward to meeting you at the "Kolokvij na IJS"!

 

 

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