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</o:shapelayout></xml><![endif]--></head><body lang=SL link=blue vlink=purple><div class=WordSection1><p class=MsoNormal>Vabimo vas na 19. predavanje iz sklopa "Kolokviji na IJS" v letu 2014/15, ki bo <strong><span style='color:red'>v sredo, 13. maja 2015, ob 13. uri </span></strong><span style='color:red'>v Veliki predavalnici Instituta »Jožef Stefan«</span> na Jamovi cesti 39 v Ljubljani. Napovednik predavanja najdete tudi na naslovu <a href="http://www.ijs.si/ijsw/Koledar_prireditev">http://www.ijs.si/ijsw/Koledar_prireditev</a>, posnetke preteklih predavanj<span style='color:blue'> </span>pa na <a href="http://videolectures.net/kolokviji_ijs">http://videolectures.net/kolokviji_ijs</a>. <o:p></o:p></p><p class=MsoNormal style='margin-bottom:12.0pt'>~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~<o:p></o:p></p><p class=MsoNormal><b><span lang=EN-US style='mso-fareast-language:ZH-CN'>prof. dr. Alan C. Seabaugh<o:p></o:p></span></b></p><p class=MsoNormal><i><span lang=EN-US style='mso-fareast-language:ZH-CN'>University of Notre Dame, Notre Dame, Indiana, ZDA<o:p></o:p></span></i></p><p class=MsoNormal><b><span style='font-size:14.0pt'><o:p> </o:p></span></b></p><p class=MsoNormal><b><span style='font-size:14.0pt'><o:p> </o:p></span></b></p><p class=MsoNormal align=center style='mso-margin-top-alt:auto;margin-bottom:12.0pt;text-align:center'><b><span lang=EN-US style='font-size:14.0pt'>Tranzistorji na osnovi dihalkogenidov prehodnih kovin, dopiranih z ioni<o:p></o:p></span></b></p><p class=MsoNormal style='mso-margin-top-alt:auto;margin-bottom:12.0pt;text-align:justify'>Tankoplastni tranzistorji z debelino nekaj atomskih plasti so vse bolj zanimivi za uporabo v mikroelektroniki. Taki tranzistorji omogočajo vrhunsko elektrostatično kontrolo delovanja vrat, majhno gostoto elektronskih stanj na mejni površini, vzpostavitev spoja med komponentami brez strukturnih napetosti in fleksibilnost. Za proizvodnjo tovrstnih naprav je potrebno razviti metode za rast atomsko tankih plasti z veliko površino in s kontrolirano gostoto strukturnih napak, ohmske kontakte, načine dopiranja spojev in nukleacije tankoplastnih dielektričnih vrat ter procese samourejanja. Predstavili bomo zadnje dosežke v razvoju tranzistorjev na osnovi dihalkogenidov prehodnih kovin v obliki nanocevk in lističev. Opisali bomo načine dopiranja tovrstnih naprav s trdnimi polimernimi dielektriki ter z ioni litija in cezija. <span lang=EN-US><o:p></o:p></span></p><p class=MsoNormal style='mso-margin-top-alt:auto;margin-bottom:12.0pt;text-align:justify'>Predavanje bo v angleščini.<o:p></o:p></p><p class=MsoNormal style='mso-margin-top-alt:auto;margin-bottom:12.0pt'><strong><span style='font-family:"Calibri","sans-serif";color:red'>Lepo vabljeni!</span></strong><strong><span style='font-weight:normal'><o:p></o:p></span></strong></p><p class=MsoNormal><o:p> </o:p></p><p class=MsoNormal><o:p> </o:p></p><p class=MsoNormal><o:p> </o:p></p><span style='font-size:12.0pt;font-family:"Times New Roman","serif";mso-fareast-language:SL'><br clear=all style='page-break-before:always'></span><p class=MsoNormal><span style='color:black'>We invite you to the 19th Institute colloquium in the academic year 2014/15. The colloquium will be held <b>on Wednesday, May 13, 2015 at 1 PM</b> in <b>the main Institute</b></span><b><span style='color:#1F497D'> </span><span style='color:black'>lecture hall</span></b><span style='color:black'>, Jamova 39, Ljubljana. To read the abstract click </span><span style='color:#1F497D'><a href="http://www.ijs.si/ijsw/Koledar_prireditev">http://www.ijs.si/ijsw/Koledar_prireditev</a>. </span><span style='color:black'>Past colloquia are posted on</span><span style='color:#1F497D'> <a href="http://videolectures.net/kolokviji_ijs">http://videolectures.net/kolokviji_ijs</a>.<o:p></o:p></span></p><p class=MsoNormal><span style='color:#1F497D'><o:p> </o:p></span></p><p class=MsoNormal style='margin-bottom:12.0pt'>********************************************<b><o:p></o:p></b></p><p class=MsoNormal><b><o:p> </o:p></b></p><p class=MsoNormal><b><span lang=EN-US>prof. dr. Alan C. Seabaugh<o:p></o:p></span></b></p><p class=MsoNormal><i><span lang=EN-US>University of Notre Dame, Notre Dame, Indiana, USA<o:p></o:p></span></i></p><p class=MsoNormal><b><span style='font-size:16.0pt;mso-fareast-language:ZH-CN'><o:p> </o:p></span></b></p><p class=MsoNormal><b><span style='font-size:16.0pt;mso-fareast-language:ZH-CN'><o:p> </o:p></span></b></p><p class=MsoNormal align=center style='text-align:center'><b><span lang=EN-US style='font-size:16.0pt'>Ion-doped transition metal dichalcogenide transistors<o:p></o:p></span></b></p><p class=MsoNormal align=center style='text-align:center'><o:p> </o:p></p><p class=MsoNormal><span lang=EN-US>Atomically-thin transistors are the subject of growing interest for microelectronic applications. These materials offer superior electrostatic gate control, low interface state density, strain-relaxed heterojunction formation, and flexibility. For devices these systems need techniques for large area growth, defect control, ohmic contacts, junction doping, gate dielectric nucleation, low oxide thickness gate stacks, and self-alignment processes. This talk will summarize recent progress in development of transition metal dichalcogenide transistors in nanotube and flake geometries. An approach for doping these devices using solid polymer dielectrics and ions like lithium and cesium will be shown.<o:p></o:p></span></p><p class=MsoNormal><b><span lang=EN-US><o:p> </o:p></span></b></p><p class=MsoNormal>Cordially invited!<o:p></o:p></p><p class=MsoNormal><span style='font-size:11.0pt;font-family:"Calibri","sans-serif";color:#1F497D'><o:p> </o:p></span></p></div></body></html>